2 June 2003 Electrical linewidth metrology for systematic CD variation characterization and causal analysis
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Abstract
Control of critical dimension (CD) variation is of extreme importance in modern semiconductor manufacturing processes. To be controlled, the nature of CD variation must be understood. This paper outlines a method for characterizing systematic spatial variation by means of dense electrical linewidth measurements, including actual sample data. In addition, since exhaustive sampling is prohibitively expensive for routine use, a method is discussed for finding an optimum economical sampling plan and using this plan to track systematic CD variation over time.
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Jason P. Cain, Costas J. Spanos, "Electrical linewidth metrology for systematic CD variation characterization and causal analysis", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.483664; https://doi.org/10.1117/12.483664
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