2 June 2003 Electrical linewidth metrology for systematic CD variation characterization and causal analysis
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Abstract
Control of critical dimension (CD) variation is of extreme importance in modern semiconductor manufacturing processes. To be controlled, the nature of CD variation must be understood. This paper outlines a method for characterizing systematic spatial variation by means of dense electrical linewidth measurements, including actual sample data. In addition, since exhaustive sampling is prohibitively expensive for routine use, a method is discussed for finding an optimum economical sampling plan and using this plan to track systematic CD variation over time.
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Jason P. Cain, Jason P. Cain, Costas J. Spanos, Costas J. Spanos, } "Electrical linewidth metrology for systematic CD variation characterization and causal analysis", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.483664; https://doi.org/10.1117/12.483664
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