Enhancing yield and productivity with process control applications for contact and via module

Stefan Majoni; Ilan Englard

doi:10.1117/12.485025

2 June 2003 Enhancing yield and productivity with process control applications for contact and via module

Stefan Majoni, Ilan Englard

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.485025
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

New metrology capabilities available on a state-of-the-art CD-SEM system are discused that allow quantification of contact and via profiles directly after lithography processing. The so-called Profile Grade (PG) analysis capability is based on secondary electron emission information obtained while scanning the contact or via holes. Three PG ranges can be distinguished to quantify contact profile quality; 0 < PG < 1.4 for closed contacts, 1.4 < PG < 1.7 for semi-opened contacts, and 1.7 < PG < 5 for fully opened contacts. These ranges are independent of resist type. The PG analysis is shown to be more accurate and sensitive in predicting contact profile marginality than classical CD measurements. A common practice in lithography processing is to use overexposure conditions to built in a safety margin ensuring that contacts are fully opened. The present work demonstrates that monitoring the lithography process by using the PG profile analysis with a lower spect limit in addition to the classical CD measurement enables the use of a lower exposure dose which increases stepper throughput. In addition, risk to yield loss is decreased because the quality of the contacts in the lower CD range can be quantified by using the PG profile analysis methodology.

Citation Download Citation

Stefan Majoni and Ilan Englard "Enhancing yield and productivity with process control applications for contact and via module", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.485025

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