FTIR based nondestructive method for metrology of depths in poly silicon-filled trenches

Shoaib Hasan Zaidi; George Stojakovic; Alois Gutmann; Cornel Bozdog; Ulrich Mantz; Sylvie Bosch Charpenay; Peter A. Rosenthal

doi:10.1117/12.484998

2 June 2003 FTIR based nondestructive method for metrology of depths in poly silicon-filled trenches

Shoaib Hasan Zaidi, George Stojakovic, Alois Gutmann, Cornel Bozdog, Ulrich Mantz, Sylvie Bosch Charpenay, Peter A. Rosenthal

Author Affiliations +

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.484998
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

A method that uses Fourier Transform Infrared (FTIR) Reflectance spectroscopy to determine the depths of poly silicon filled trenches is described. These trenches, which form the cells for trench DRAM, are arranged in arrays that are periodic in both directions. The method is non-contact and non-destructive. Large number of points per wafer can be easily measured to determine etch uniformity performance. Unlike cross section SEM based metrology, the wafer does not need to be cleaved, and thereby destroyed. The technique is thus suited for in-line metrology of product wafers. The FTIR technique was found t be very robust and provided excellent correlations with SEMs have been observed for 110 nm trenches and are reported in the paper. The method is a viable manufacturing solution for inline, non-destructive, rapid metrology on product wafers.

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Shoaib Hasan Zaidi, George Stojakovic, Alois Gutmann, Cornel Bozdog, Ulrich Mantz, Sylvie Bosch Charpenay, and Peter A. Rosenthal "FTIR based nondestructive method for metrology of depths in poly silicon-filled trenches", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.484998

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