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2 June 2003 New criterion about the topography of W-CMP wafer's alignment mark
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Abstract
Alignment error that originates in the actual wafer process is one of the factors to deteriorate total overlay accuracy. This error has been called wafer induced shift (WIS). WIS occurs through a change of alignment marks topography under the actual wafer processing. To quantify mark asymmetry WIS, we study the mark asymmetry on tungsten chemical mechanical polishing (CMP) wafers by using an atomic force microscope and define new criterion in this paper. The mark topography of CMP process wafers are measured by AFM and quantified using the new criterion. The asymmetry of the mark topography can be quantified by measuring the profiles of an alignment mark across the wafers. It has been proven, that the rotation error is caused by the asymmetry of the mark topography and the asymmetry is not related to the line width of the mark.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hideki Ina, Takahiro Matsumoto, Koichi Sentoku, Katsuhiro Matsuyama, and Kazuhiko Katagiri "New criterion about the topography of W-CMP wafer's alignment mark", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.504579
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