2 June 2003 New laboratory EUV reflectometer for large optics using a laser plasma source
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Abstract
The quality assurance for production of optical components for EUV lithography strongly requires at-wavelength metrology. Presently, at-wavelength characterizations of mirrors and masks are done using the synchrotron radiation of electron storage rings, e.g. BESSY II. For the production process of EUV optics, however, the immediate access to metrology tools is necessary and availability of laboratory devices is mandatory. Within the last years a stand alone laboratory EUV reflectometer for large samples has been developed It consists of a laser produced plasma (LLP) radiation source, a monochromator and a large goniometer systme. The manipulation system of the reflectometer can handle samples with diameters of up to 500 mm, thicknesses of up to 200 mm and weights of up to 30 kg. The wavelength can be varied from 10 nm to 16 nm. The spot size on the sample surface is about 2mm. The angle of incidence can be varied from 3° to 60°. In this paper, we describe the laboratory reflectometer in detail and discuss the achieved performance. First measurements of 4 inch mirrors are presented and discussed in comparison to the results obtained at the PTB soft x-ray radiometry beamline at BESSY II.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ludwig van Loyen, Thomas Boettger, Stefan Braun, Hermann Mai, Andreas Leson, Frank Scholze, Johannes Tuemmler, Gerhard Ulm, Herbert Legall, Peter Viktor Nickles, Wolfgang Sandner, Holger Stiel, Christian E. Rempel, Mirko Schulze, Joerg Brutscher, Fritz Macco, Stefan Muellender, "New laboratory EUV reflectometer for large optics using a laser plasma source", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.485042; https://doi.org/10.1117/12.485042
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