Photoresist line-edge roughness analysis using scaling concepts

Vasilios Constantoudis; George P. Patsis; Evangelos Gogolides

doi:10.1117/12.482809

2 June 2003 Photoresist line-edge roughness analysis using scaling concepts

Vasilios Constantoudis, George P. Patsis, Evangelos Gogolides

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.482809
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

This paper focuses on the problem of obtaining and characterizing the edge roughness of photoresist lines by analyzing top-down SEM images. AN off-line image analysis algorithm detecting the line edge and an edge roughness characterization scheme, based on scaling analysis, are briefly described. As a result, it is suggested that apart from the rms value of the edge, two more roughness parameters are needed: the roughness exponent α and the correlation length ξ. These characterize the spatial complexity of the edge and determine the dependence of sigma on the length of the measured edge. Completing our previous work on the dependencies of the roughness parameters on various image analysis options, we examine the effect of the type of noise smoothing filter. Then, a comparative study of the roughness parameters of the left and right edges of resist lines is conducted, revealing that the sigma values of the right edges are larger than those of left edges whereas the roughness exponents and the correlation lengths do not show such trend. Finally, the relation between line width roughness and line edge roughness is thoroughly investigated with interesting conclusions.

Citation Download Citation

Vasilios Constantoudis, George P. Patsis, and Evangelos Gogolides "Photoresist line-edge roughness analysis using scaling concepts", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.482809

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