2 June 2003 Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond
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Abstract
In the production of sub 140nm electronic devices, CD metrology is becoming more critical due to the increased demands placed on process control. CD metrology using CD-SEM is approaching its limits especially with respect to precision, resolution and depth of field. Potentially, scatterometry can measure structures down to 50nm with the appropriate precision. Additionally, as scatterometry is a model based technique it allows a full reconstruction of the line profile and the film stack. In this work we use SE based scatterometry in the control of a 110nm DRAM WSix Gate process at the Litho and the Mask Open step. We demonstrate the use of a single trapezoid as a basic shape model in FEM and field mapping applications as well as in a high volume production test. The scatterometry results are compared to CD-SEM data. We show that for the GC Litho application, n&k variations in some of the stack materials do not affect the scatterometry CD measurement significantly.
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Thomas Hingst, Thomas Marschner, Manfred Moert, Jan Homilius, Marco Guevremont, John Hopkins, Assim Elazami, "Spectroscopic Ellipsometry based Scatterometry enabling 193nm Litho and Etch process control for the 110nm technology node and beyond", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); doi: 10.1117/12.485011; https://doi.org/10.1117/12.485011
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