Use of rotating compensator spectroscopic ellipsometry for monitoring the photoresist etching on Si wafer

Yong-Seok Choi; Yun-Hwan Kim; Gon-Ho Kim; Hye-Keun Oh; Ilsin An

doi:10.1117/12.483478

2 June 2003 Use of rotating compensator spectroscoic ellipsometry for monitoring the photoresist etching on Si wafer

Yong-Seok Choi, Yun-Hwan Kim, Gon-Ho Kim, Hye-Keun Oh, Ilsin An

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.483478
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Etching is one of the important processes of semiconductor production. In this study, we monitored surface etching process, which is used for dielectric barrier discharge (DBD) at atmospheric pressure and room temperature, of photoresist (PR) on Si wafer by using rotating compensator spectroscopic ellipsometry (RCSE). Ellipsometry has mono-layer sensitivity and we can use it in a severe atmosphere such as a reactive gas, plasma and high temperature etc. Also, it is possible to perform non-destructive, real-time, and in-situ measurement. DBD reactor used 20 kV pulse power. We used alumina as dielectric material. The atmosphere of DBD plasma was operated without dark period in optimal frequency. We used 248 nm PR as sample. The PR is coated by spin coater on Si wafer with 248 nm anti-reflection coating (ARC), and wafer is baked after that. Samples are not exposed and are not developed, but are etched after bake. The PR is removed linearly with respect to time and temperature. We obtained several results at various experimental conditions - temperature, gas flow, process time and frequency. On the assumption that PR is removed homogeneously, we can calculate the etching rate by continuous measurement of thickness of PR by ellipsometry.

Citation Download Citation

Yong-Seok Choi, Yun-Hwan Kim, Gon-Ho Kim, Hye-Keun Oh, and Ilsin An "Use of rotating compensator spectroscoic ellipsometry for monitoring the photoresist etching on Si wafer", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.483478

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Etching

Atmospheric plasma

Semiconducting wafers

Dielectrics

Silicon

Photoresist materials

Ellipsometry

Show All Keywords

Keywords/Phrases

Search In:

Publication Years