PROCEEDINGS VOLUME 5039
MICROLITHOGRAPHY 2003 | 23-28 FEBRUARY 2003
Advances in Resist Technology and Processing XX
MICROLITHOGRAPHY 2003
23-28 February 2003
Santa Clara, California, United States
Future Resist Directions
Proc. SPIE 5039, Extendibility of chemically amplified resists: another brick wall?, 0000 (12 June 2003); doi: 10.1117/12.487739
Proc. SPIE 5039, Resist requirements in the era of resolution enhancement techniques, 0000 (12 June 2003); doi: 10.1117/12.487728
Materials for 157-nm Resists I
Proc. SPIE 5039, Evaluation of novel fluorinated resist matrices for 157-nm lithography, 0000 (12 June 2003); doi: 10.1117/12.485195
Proc. SPIE 5039, Advances in TFE-based fluoropolymers for 157-nm lithography: a progress report, 0000 (12 June 2003); doi: 10.1117/12.485192
Proc. SPIE 5039, Dry-etching resistance of fluoropolymers for 157-nm single-layer resists, 0000 (12 June 2003); doi: 10.1117/12.483735
Proc. SPIE 5039, Novel main-chain-fluorinated polymers for 157-nm photoresists, 0000 (12 June 2003); doi: 10.1117/12.485085
Proc. SPIE 5039, Rational design in cyclic olefin resists for sub-100-nm lithography, 0000 (12 June 2003); doi: 10.1117/12.485100
Proc. SPIE 5039, Hydrogen bonding and aqueous base dissolution behavior of hexafluoroisopropanol-bearing polymers, 0000 (12 June 2003); doi: 10.1117/12.485135
Materials for 157-nm Resists II
Proc. SPIE 5039, Single-layer fluoropolymer resists for 157-nm lithography, 0000 (12 June 2003); doi: 10.1117/12.485206
Proc. SPIE 5039, Dissolution inhibitors for 157-nm photolithography, 0000 (12 June 2003); doi: 10.1117/12.485191
Proc. SPIE 5039, Development and characterization of new 157-nm photoresists based on advanced fluorinated polymers, 0000 (12 June 2003); doi: 10.1117/12.485046
Proc. SPIE 5039, F2 resist outgassing studied by in situ QCM technique, 0000 (12 June 2003); doi: 10.1117/12.485090
Proc. SPIE 5039, Dependence of outgassing characters and total amount of outgassed species at 157-nm exposure on the structures of resist base polymer, 0000 (12 June 2003); doi: 10.1117/12.485200
Antireflective Coatings
Proc. SPIE 5039, New generation of bottom antireflective coatings (BARCs): photodefinable BARCs, 0000 (12 June 2003); doi: 10.1117/12.483726
Proc. SPIE 5039, Highly etch-selective spin-on bottom antireflective coating for use in 193-nm lithography and beyond, 0000 (12 June 2003); doi: 10.1117/12.485178
Proc. SPIE 5039, Anthracene-organosiloxane spin-on antireflective coating for KrF lithography, 0000 (12 June 2003); doi: 10.1117/12.485154
Proc. SPIE 5039, Hardmask technology for sub-100-nm lithographic imaging, 0000 (12 June 2003); doi: 10.1117/12.485174
Proc. SPIE 5039, New approach for pattern collapse problem by increasing contact area at sub-100-nm patterning, 0000 (12 June 2003); doi: 10.1117/12.485052
Materials for 193-nm Resists
Proc. SPIE 5039, Development of high-performance negative-tone resists for 193-nm lithography, 0000 (12 June 2003); doi: 10.1117/12.485203
Proc. SPIE 5039, High-performance 193-nm photoresist materials based on a new class of polymers containing spaced ester functionalities, 0000 (12 June 2003); doi: 10.1117/12.485126
Proc. SPIE 5039, Impact of thin resist processes on post-etch LER, 0000 (12 June 2003); doi: 10.1117/12.485168
Proc. SPIE 5039, Imaging and photochemistry studies of fluoropolymers for 193-nm lithography, 0000 (12 June 2003); doi: 10.1117/12.485204
Processing for 193-nm Resists
Proc. SPIE 5039, Enhanced processing: sub-50-nm features with 0.8-micron DOF using a binary reticle, 0000 (12 June 2003); doi: 10.1117/12.485202
Proc. SPIE 5039, Line-edge roughness reduction for advanced metal gate etch with 193-nm lithography in a silicon decoupled plasma source etcher (DPSII), 0000 (12 June 2003); doi: 10.1117/12.485151
Proc. SPIE 5039, Comparison of ArF bilayer resists for sub-90-nm L/S fabrication, 0000 (12 June 2003); doi: 10.1117/12.485114
Proc. SPIE 5039, Evaluation of process-based resolution enhancement techniques to extend 193-nm lithography, 0000 (12 June 2003); doi: 10.1117/12.485156
Advanced Resist Processing
Proc. SPIE 5039, Intel benchmarking and process integration of 157-nm resists, 0000 (12 June 2003); doi: 10.1117/12.483730
Proc. SPIE 5039, Contact printing to the 45-nm node using a binary mask and 248-nm lithography, 0000 (12 June 2003); doi: 10.1117/12.485102
Proc. SPIE 5039, Will Darwin's law help us to improve our resist models?, 0000 (12 June 2003); doi: 10.1117/12.485078
Proc. SPIE 5039, Monitoring of photo-resist poisoning, 0000 (12 June 2003); doi: 10.1117/12.485091
Resist Fundamentals
Proc. SPIE 5039, Quantum efficiency of PAG decomposition in different polymer matrices at advanced lithographic wavelengths, 0000 (12 June 2003); doi: 10.1117/12.483705
Proc. SPIE 5039, Measurement of photoacid generation kinetics in photoresist thin films via capacitance techniques, 0000 (12 June 2003); doi: 10.1117/12.485081
Proc. SPIE 5039, Using the critical ionization model for resist development to estimate contrast curves and roughening, 0000 (12 June 2003); doi: 10.1117/12.485131
Proc. SPIE 5039, X-ray absorption spectroscopy to probe interfacial issues in photolithography, 0000 (12 June 2003); doi: 10.1117/12.485149
Proc. SPIE 5039, Glass transition temperature studies in thin photoresist films with an interferometric method, 0000 (12 June 2003); doi: 10.1117/12.485072
Proc. SPIE 5039, Polymer dynamics and diffusive properties in ultrathin photoresist films, 0000 (12 June 2003); doi: 10.1117/12.485140
Resist Line Edge Roughness
Proc. SPIE 5039, Controlling line-edge rougness to within reasonable limits, 0000 (12 June 2003); doi: 10.1117/12.485169
Proc. SPIE 5039, Effects of processing parameters on line-width roughtness, 0000 (12 June 2003); doi: 10.1117/12.485162
Proc. SPIE 5039, Ultrathin photoresists for 193-nm lithography, 0000 (12 June 2003); doi: 10.1117/12.485132
Proc. SPIE 5039, Polyelectrolyte effects in model photoresist developer solutions: roles of base concentration and added salts, 0000 (12 June 2003); doi: 10.1117/12.485147
Proc. SPIE 5039, Diffusion-induced line-edge roughness, 0000 (12 June 2003); doi: 10.1117/12.483734
Proc. SPIE 5039, Enhanced quantitative analysis of resist image contrast upon line-edge roughness (LER), 0000 (12 June 2003); doi: 10.1117/12.485150
Novel Resist Materials
Proc. SPIE 5039, Bilayer technology for ArF and F2 lithography: the development of resists to minimize silicon outgassing, 0000 (12 June 2003); doi: 10.1117/12.485141
Proc. SPIE 5039, Nanocomposite resist for low-voltage electron beam lithography (LVEBL), 0000 (12 June 2003); doi: 10.1117/12.483740
Proc. SPIE 5039, Polyhedral oligomeric silsesquioxane (POSS) based resist materials for 157-nm lithography, 0000 (12 June 2003); doi: 10.1117/12.485083
Proc. SPIE 5039, 157-nm bilayer resist: patterning and etching performance, 0000 (12 June 2003); doi: 10.1117/12.483769
Proc. SPIE 5039, Wavelength invariant Bi/In thermal resist as a Si anisotropic etch masking layer and direct-write photomask material, 0000 (12 June 2003); doi: 10.1117/12.485177
Emerging Resist Technology: Joint Session
Proc. SPIE 5039, Intel's EUV resist development, 0000 (12 June 2003); doi: 10.1117/12.485095
Proc. SPIE 5039, Surface and line-edge roughness in acid-breakable resin-based positive resist, 0000 (12 June 2003); doi: 10.1117/12.483773
Proc. SPIE 5039, Hybrid bilayer imaging approach using single-component metal-organic precursors for high-resolution electron beam lithography, 0000 (12 June 2003); doi: 10.1117/12.485133
Proc. SPIE 5039, Nanopatterning of spin-coatable TiO2 resist using an electron beam, 0000 (12 June 2003); doi: 10.1117/12.485121
Section
Proc. SPIE 5039, Study of resist outgassing by F2 laser irradiation, 0000 (12 June 2003); doi: 10.1117/12.485087