12 June 2003 A novel photoacid generator for chemically amplified photoresist with ArF exposure
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Abstract
Recently a new non-ionic PAG was developed and its performance was evaluated in a model ArF photoresist formulation. The development profile of the photoresist including the new PAG was studied in detail by using dissolution rate measurement (DRM) apparatus and compared with popular PAGs, such as triphenylsulfonium triflate (TPST), bis(p-ter-butylphenyl)iodonium triflate (BTIT) and 5-norbornene-2,3-dicarboximidyl trifluoromethanesulfonate (NDIT). As the consequences, the photoefficiency of the new PAG was higher than BTIT and NDIT and comparable to TPST. From the DRM results, the new PAG showed a high contrast (high tan θ value). In addition, the simulation based on the results of DRM suggested that the new PAG is superior to TPST in terms of resolution and depth of focus (DOF) latitude.
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Toshikage Asakura, Hitoshi Yamato, Akira Matsumoto, Peter Murer, Masaki Ohwa, "A novel photoacid generator for chemically amplified photoresist with ArF exposure", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.483733; https://doi.org/10.1117/12.483733
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