12 June 2003 Advanced RELACS (resolution enhancment of lithography by assist of chemical shrink) material for 193-nm lithography
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Abstract
The controllability of iso-dense bias generated by 193nm lithography was intensively studied with novel RELACS material. The shrinkage, shrinkage linearity, and shrinkage bias were considerably relied on MB temperature. It is the most powerful technology that changing of mixing bake (MB) temperature can control iso-dense bias. Furthermore, AZ Exp.R600 has several attractive advantages, which are able to improve LWS, LER, sidewall roughness of contact holes, surface roughness, and side lobe. Moreover, we have successfully developed a novel RELACS material to be applied for the patterning of sub-70nm contact hole.
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Sungeun Hong, Sungeun Hong, Yusuke Takano, Yusuke Takano, Takashi Kanda, Takashi Kanda, Takanori Kudo, Takanori Kudo, Munirathna Padmanaban, Munirathna Padmanaban, Hatsuyuki Tanaka, Hatsuyuki Tanaka, Si-Hyeung Lee, Si-Hyeung Lee, Jung-Hyeon Lee, Jung-Hyeon Lee, Sang-Gyun Woo, Sang-Gyun Woo, "Advanced RELACS (resolution enhancment of lithography by assist of chemical shrink) material for 193-nm lithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485155; https://doi.org/10.1117/12.485155
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