12 June 2003 Anthracene-organosiloxane spin-on antireflective coating for KrF lithography
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Abstract
A sacrificial, spin-on 248nm UV absorbing organosiloxane film has been developed to enable via first trench last (VFTL) dual-damascene patterning. Amongst other design objectives one key material requirement was that the film be SiO based to facilitate trench etch. Because our starting organosiloxane polymer is transparent a chromophores that absorbs at 248 nm had to be included. Anthracene was selected as it offered the largest amount of absorption per mole. Unfortunately, commercially available anthracene moieties with different functional groups when added directly to the organosiloxane polymer solution resulted in films of very marginal quality. The primary issue was the poor solubility and thermal stability of the anthracene compound within the organosiloxane matrix. To address this fundamental problem the chromophore was stabilized by chemically attaching it to ethyl-orthosilicate. The resulting molecule, 9-anthracene carboxy-methyl triethoxysilane (TESAC) was developed. By combining the appropriate amounts of TESAC, TEOS and other organo-TEOS monomers with the appropriate solvents and a catalyst a stable, 248nm light absorbing anthracene-organosiloxane polymer was developed. This work has led to the development of Duo248 organosiloxane based bottom antireflective coatings. Topics such as the development of TESAC, lithography, plasma etch and selective removal will be discussed.
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Joseph T. Kennedy, Teri Baldwin-Hendricks, Mello Hebert, Arlene Suedmeyer, "Anthracene-organosiloxane spin-on antireflective coating for KrF lithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485154; https://doi.org/10.1117/12.485154
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