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12 June 2003 Baking study of fluorinated 157-nm resist
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A statistical design of experiments for the post-applied bake and post-exposure bake temperatures for two types of resists, the commercial formulation AZ FX 1000P and an experimental resist AZ EXP 20 X, was carried out using contrast, clearing dose and dark erosion as response variables examined. It was found that for AZ FX 1000P dark erosion could be suppressed entirely and contrast improved by employing a lower PEB without significant impact on the contrast. In this manner, a substantial improvement in the image quality for AZ FX 1000P was obtained. AZ EXP 20X was not susceptible to dark erosion at higher post-applied bakes as was AZ FX 1000P. Both resists gave better imaging at lower post-exposure bake temperatures in the range of ~110°C, presumably because of excessive acid diffusion at higher temperatures, such as 150°C. Generally, the contrast achievable with AZ EXP 20 X (>16) is much higher than that possible for AZ FX 1000P (~6).
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Francis M. Houlihan, Raj Sakamuri, Andrew R. Romano, Ralph R. Dammel, Will Conley, Georgia K. Rich, Daniel Miller, Larry F. Rhodes, Joseph M. McDaniels, and Chun Chang "Baking study of fluorinated 157-nm resist", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003);

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