Challenges of processing thick and ultrathick photoresist films

Mike Kubenz; Ute Ostrzinski; Freimut Reuther; Gabi Gruetzner

doi:10.1117/12.485084

Translator Disclaimer

12 June 2003 Challenges of processing thick and ultrathick photoresist films

Mike Kubenz, Ute Ostrzinski, Freimut Reuther, Gabi Gruetzner

Author Affiliations +

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485084
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

High viscous photoresists are required for the MEMS and MOEMS technology. Processing of thick and ultra-thick resist films is a challenging task. In this paper, procedures are presented to attain improved patterning results. Baking by infra-red radiation (IR baking) is described as an effective approach for effectively drying thick and ultra-thick resist layers. Patterning results are shown to confirm the performance and benefits of IR baking. Examples of up to 60μm thick layers of two positive tone resists, ma-P 100 and ma-P 1275 (micro resist technology GmbH, Germany), and up to 500 μm layers of chemically amplified negative tone photoresist SU-8 (MicroChem Newton, MA) are presented. IR baking allows reduced process time and lower bake temperature enabling high aspect ratio and low stress SU-8 layers.

Citation Download Citation

Mike Kubenz, Ute Ostrzinski, Freimut Reuther, and Gabi Gruetzner "Challenges of processing thick and ultrathick photoresist films", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485084

ACCESS THE FULL ARTICLE