Characterization of an ultra-thick positive photoresist for electroplating applications

Warren W. Flack; Ha-Ai Nguyen; Elliott Sean Capsuto

doi:10.1117/12.483748

12 June 2003 Characterization of an ultra-thick positive photoresist for electroplating applications

Warren W. Flack, Ha-Ai Nguyen, Elliott Sean Capsuto

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.483748
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

The performance requirements for ultra-thick photoresists have increased rapidly with the dramatic growth in new lithographic applications that require electroplating processes. Two of the main applications for ultra-thick photoresists are nanotechnology (MEMS) and advanced packaging. Flipchip packaging has become widely adopted to address electrical device performance and chip form factor considerations. The growth in the nanotechnology market is driven by a wide range of products, which include accelerometers, ink jet print heads, biomedical sensors and optical switches. Electroplating levels for these applications require a photosensitive polymer material capable of coating, exposing and plating with conventional semiconductor equipment and standard ancillary process chemicals. A single coat step to achieve the final photoresist thickness is critical to minimize the number of process steps and cycle time. The sidewall profile, aspect ratio, electroplating durability and subsequent stripability are all important. This study characterized a novel positive photosensitive chemically amplified photoresist (ShinEtsu SIPR) for the use in a 65μm thick electroplating level on copper. The lithographic performance of the ultra-thick positive photoresist was optimized using a broad band, low numerical aperture, 1x stepper to control critical dimensions (CD), sidewall angles and aspect ratios. Cross sectional SEM analysis, contrast curves, process linearity, and process latitude plots were used to establish the lithographic capabilities. High aspect ratio structures were then electroplated using the optimized photoresist process to demonstrate photoresist durability and stripability. A recommended process flow is described for this photoresist and stepper.

Citation Download Citation

Warren W. Flack, Ha-Ai Nguyen, and Elliott Sean Capsuto "Characterization of an ultra-thick positive photoresist for electroplating applications", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.483748

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available