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12 June 2003 Dissolution inhibitors for 157-nm photolithography
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The focus of 157 nm lithographic research is shifting from materials research to process development. Poly (2-(3,3,3-trifluoro-2-trifuoromethyl-2-hydroxypropyl) bicyclo[2.2.1]heptane-5-ene) (PNBHFA) has received a great deal of attention as a possible base resin for 157 nm lithography. The Asahi Glass RS001 polymer, which was introduced at SPIE in 2002, has also shown promise as a 157 nm base resin due to its low absorbance. Partial protection of either polymer with an acid labile protecting group is a common design for functional photoresists. We previously reported the blending of the carbon monoxide copolymers with PNBHFA copolymers to achieve the critical number of protected sites for optimum imaging performance and contrast. Our group has since studied the use of the unprotected base resin with an additive monomeric dissolution inhibitors (DIs) and a photoacid generator (PAG) to form a three component resist. Surprisingly unprotected PNBHFA was discovered to have dissolution inhibition properties that are far superior to the dissolution inhibition properties of novolac. Several DIs were prepared and tested in PNBHFA to take advantage of the resins dissolution inhibition properties. We have also recently explored the performance of a two-component resist using PAGs that also function as DIs.
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Charles R. Chambers, Shiro Kusumoto, Guen Su Lee, Alok Vasudev, Leonidas Walthal, Brian Philip Osborn, Paul Zimmerman, Will Conley, and C. Grant Willson "Dissolution inhibitors for 157-nm photolithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003);

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