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12 June 2003 Dry-etching resistance of fluoropolymers for 157-nm single-layer resists
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Novel fluoropolymers having partially fluorinated monocyclic (5-membered and 6-membered ring) structure have been synthesized with radical cyclo-polymerization, which have C-F bond in the polymer main chain and also possess fluorocontaining acidic alcohol group. These polymers have excellent transparency lower than 1.0 μm-1 at 157nm wavelength, a small amount of outgassing, high sensitivity and good adhesion to the wafer. However, this fluoropolymer have lower etching resistance (half of conventional KrF resists) and it must be improved for applying to the single-layer resist. In this paper, we show the new model of the estimation of the dry-etching resistance for designing polymer compositions. It is well known that the model using carbon-atom-density as a parameter is useful for estimating dry-etching resistance. However, these models did not agree with the results of our fluoropolymers. Our new model was focused on the surface area and the volume of the polymer. We succeeded to explain the relationship between the dry-etching resistance and the composition of the fluoropolymer. According to this model, the compositions of fluoropolymer such as protective groups, protective ration and co-polymer units were optimized to improve their etching resistance.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuhide Kawaguchi, Jun Irisawa, Shun-ichi Kodama, Shinji Okada, Yoko Takebe, Isamu Kaneko, Osamu Yokokoji, Seiichi Ishikawa, Shigeo Irie, Takuya Hagiwara, and Toshiro Itani "Dry-etching resistance of fluoropolymers for 157-nm single-layer resists", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003);

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