Recently, KrF lithography has extended to 100nm technical node using various techniques and pushed ArF lithography to sub-100nm application. To enhance resolution, there are many problems to be solved, like dark erosion (dark film loss), sloped profile, line edge roughness (LER), and so on. Also, thin resist film must be used to prevent pattern collapse. In general, the aspect ratio is less than 2.5 for sub 100nm. For this reason, chemically amplified resist has to get high etch resistance, low dark film loss and vertical profile shape at maximum resolution. Many efforts have been made to solve these problems and to improve resist performance. In this study, we tried to resolve some of these problems using various acid-quenching systems. We estimated the quencher ability using acid diffusion depth in resist film by sandwich method and pKb values of amines. The changes of lithographic properties according to the application of different amines were investigated. It was found that acid-quenching ability of an amine was not related to its basicity from sandwich experiment results. In fact, quenching efficiency was more closely related to the amine molecular structure and bulkiness of a substituent attached to nitrogen atom. We observed that pattern shape and process margin were not directly related to the basicity of an amine, but more related to quenching efficiency. The amines having higher quenching ability show wider process margin. However, other lithographic properties such as LER and dark erosion were not affected by acid-quenching ability. It is believed that they are determined by other components including polymer, protection groups, and PAGs.