12 June 2003 Evaluation of process-based resolution enhancement techniques to extend 193-nm lithography
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This article addresses the evaluation of non-conventional approaches to pattern smaller contacts than those obtained through standard 193nm lithography. The 2002 update of the ITRS Roadmap specifies 100nm and 110nm contacts in resist for DRAMs and ASICs respectively at the 90nm node. The depth of focus (DOF) for small contacts with the current 193nm exposure tools is not adequate and according to Raleigh’s equation, the higher numerical aperture (NA) 193nm exposure tools can be expected to have further decreased DOF. Therefore it is important to investigate the capabilities of process based resolution enhancement techniques to print smaller contacts using the current 193nm exposure tools. This article presents an evaluation of proves based resolution enhancement techniques such as REFLOW, RELACS and SAFIER.
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Sripadma Satyanarayana, Sripadma Satyanarayana, Chris L. Cohan, Chris L. Cohan, } "Evaluation of process-based resolution enhancement techniques to extend 193-nm lithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485156; https://doi.org/10.1117/12.485156

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