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12 June 2003 Extendibility of chemically amplified resists: another brick wall?
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The chemically amplified resist concept, first described two decades past and originally targeted for the 1000 nm device generation, has proved to have remarkable versatility. The semiconductor industry has come to rely on the properties of CA resists to achieve high resolution, high aspect ratio imaging accompanied by the high throughput that stems from their catalytic imaging mechanism. As the industry maps the evolution of lithographic technology to the 20 nm regime, it is appropriate to review the factors that control the performance of CA resists, and examine whether the traditional evolutionary path of materials refinement will provide materials capable of supporting device manufacturing at those dimensions. The impacts of image blur, line-edge roughness and shot noise on the ability to image CA resists at nanoscale dimensions will be discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William D. Hinsberg, Frances A. Houle, Martha I. Sanchez, John A. Hoffnagle, Gregory M. Wallraff, David R. Medeiros, Gregg M. Gallatin, and Jonathan L. Cobb "Extendibility of chemically amplified resists: another brick wall?", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003);

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