12 June 2003 Glass transition temperature studies in thin photoresist films with an interferometric method
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Abstract
Effects of process variables, such as film thickness, type of substrate and thermal processing conditions on Tgfilm were explored using Optical Interferometry; a novel, low-cost, rapid methodology. This methodology is applied for in-situ measurement of the glass transition temperature in thin resist films (Tgfilm) spin-coated on flat reflective substrates. The presented methodology enabled studies on Tg changes during resist processing in characteristic positive and negative tone chemically amplified (CA) resist materials allowing deeper insight in resist optimization issues. The film thickness and substrate effects on Tgfilm were studied in the case of one positive chemically amplified resist (commercial for DUV) as well as the exposure effect on Tgfilm in the case of a negative chemically amplified resist formulations. Also a series of POSS-based new copolymers under evaluation for use in 157nm lithography are studied in order to reveal the film quality. In the last case new copolymers with components interacting strongly with the substrate surface were examined and the calculated Tgfilm from the OPTI method differs from the corresponding DSC bulk values.
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Dimitra Niakoula, Ioannis Raptis, Vasilios Bellas, Panagiotis Argitis, "Glass transition temperature studies in thin photoresist films with an interferometric method", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485072; https://doi.org/10.1117/12.485072
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