12 June 2003 High-sensitivity nanocomposite resist materials for x-ray and EUV lithography
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Novel positive nanocomposite photoresists for X-ray lithography (XRL) and Extreme Ultraviolet lithography (EUVL) have been developed. In this work, resists containing acrylate monomers, organic-inorganic hybrid nanoparticles and a photo acid generator (PAG) were prepared by varying the compositions of the components. It was observed that the nanophotoresists were suitable for XRL and EUVL. The new resists exhibit all characteristics for NGL viz. defect free thin film formation <100 nm and show high sensitivity (1.0 - 1.2 mJ/cm2) and contrast (γ=4.9). This significant increase in sensitivity should lead to an enormous cost reduction of the XRL and EUVL processes as well as high-resolution sub-100 nm features.
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Mohammad Azam Ali, Mohammad Azam Ali, Kenneth E. Gonsalves, Kenneth E. Gonsalves, N. Batina, N. Batina, Victoria Golovkina, Victoria Golovkina, Franco Cerrina, Franco Cerrina, } "High-sensitivity nanocomposite resist materials for x-ray and EUV lithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485139; https://doi.org/10.1117/12.485139

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