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12 June 2003 Impact of surfactant in developer and rinse solution on 193-nm lithography performance
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Abstract
In this study, surfactant-formulated developer and rinse solutions were used to enhance the performance of a 193 nm lithography process. The wetting and interfacial characteristics of surfactant-formulated solutions were studied and utilized as a screening tool for optimum formulation. The selected formulation was compared to the non-formulated TMAH development and DI water rinse process. Surfactants in developer and rinse solution significantly reduced pattern collapse, enabling an 86% increase of critical normalized aspect ratio. This corresponds to an increase in the usable resist thickness for an 80 nm 1:1 feature from 179 nm to 332 nm. Additional benefit provided by surfactant formulated process was a 25% improvement on both within-wafer and wafer-to-wafer critical dimension uniformity.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Peng Zhang, Manuel Jaramillo Jr., Danielle M. King, Brenda Ross, David Witko, Ted A. Paxton, and Todd Davis "Impact of surfactant in developer and rinse solution on 193-nm lithography performance", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485170
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