12 June 2003 Improvement of resist process margin with short develop time process
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Short develop time process was intensely investigated and characterized. Process margin for two different 193nm chemically amplified positive resists were analyzed for different develop times. It was found that the process margin, Exposure Latitude(EL) and Depth of Focus (DOF) for both resists is increased by shortened develop time. Resist develop rate and pattern wall angle characterization revealed that an improvement in process margin is strongly correlated to the resist develop rate and the key to obtain increased process margin is to terminate the develop reaction while the resist dissolution rate remains large. The “short develop time” benefits are suggested to result from the reduced dependence of the developed pattern on the latent image due to incomplete develop caused by the early termination of the develop reaction. Deeper investigation revealed the resist develop rate was affected by the develop application method as well as resist chemical differences. Dainippon Screen’s (DNS) slit-scan develop system is revealed to be very effective in controlling the resist develop rate because of its ability to apply the developer puddle very still and suitable for the short develop time process. It was also confirmed that the pattern collapse was reduced by shortening develop time. It is suggested this phenomenon is correlated to the penetration of developer into the resist-substrate interface as well as the change in pattern wall angle as a function of develop time. Post-develop defect levels have been confirmed for one 193nm resist over a range different develop times. This study revealed that develop time shortening resulted in fewer develop defects. In summary it is confirmed that short develop time process has the advantages of improved process margin for factors such as EL, DOF, pattern collapse, develop defects as well as throughput.
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Osamu Tamada, Osamu Tamada, Masakazu Sanada, Masakazu Sanada, } "Improvement of resist process margin with short develop time process", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.483752; https://doi.org/10.1117/12.483752

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