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12 June 2003 Intel's EUV resist development
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Abstract
The success of extreme ultraviolet (EUV) lithography depends upon developing resists that meet the patterning requirements for the technology node in which EUV is inserted. This paper presents Intel’s patterning requirements and development strategies for EUV resists. Two of the primary problems for EUV resists are meeting the linewidth roughness (LWR) requirement, and reducing resist absorbance to obtain good sidewall profiles. Benchmarking data shows that none of the current EUV photoresists meet LWR targets. Modeling results for EUV resists show the impact of resist absorbance on sidewall angle and resolution.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heidi B. Cao, Jeanette M. Roberts, Janel Dalin, Manish Chandhok, Robert P. Meagley, Eric M. Panning, Melissa K. Shell, and Bryan J. Rice "Intel's EUV resist development", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485095
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