12 June 2003 Investigation of cyclopolymerization for ArF positive photoresist
Author Affiliations +
Cyclopolymerization methodology is unique because it uses a standard free radical polymerization that is free from the use of metal catalyzed chemistry while it still can provide the main chain cyclic structure. The feasibility and applicability have been examined previously, from which some of the potential opportunities have been revealed. Our initial research direction was aimed at developing robust etching resistant acrylic resins through cyclopolymerization. During the course of our investigation it came to our attention that there might be more than one benefit we could get from this approach and here in reported is our recent progress in the study. A series of diacrylic monomers and their cyclic polymers have been prepared and evaluated for ArF optical lithography applications. The reaction of acrylic esters that have essential functional groups for lithographic performances such as an acid-cleavable bulky adamantyl group and a polar lactone group with formaldehyde in the presence of diazabicyclo-(2,2,2)octane has been shown to provide access to an ether linked symmetric or asymmetric diacrylic monomer depending on the starting materials with a reasonable yield after an adequate purification procedure. While the main research focus of cyclopolymerization of diacrylic monomers has been an improvement of dry etching resistance, an equal interest was placed on enhancing homogeneity in the polymerization reaction medium.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Youngjoon Lee, Youngjoon Lee, Kazuhiko Hashimoto, Kazuhiko Hashimoto, Hiroaki Fujishima, Hiroaki Fujishima, Ryotaro Hanawa, Ryotaro Hanawa, Yasunori Uetani, Yasunori Uetani, } "Investigation of cyclopolymerization for ArF positive photoresist", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485064; https://doi.org/10.1117/12.485064

Back to Top