12 June 2003 Molecular weight effect on line-edge roughness
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Abstract
The effect of molecular weight (Mw) on line-edge roughness (LER) in ZEP resists, which are positive-tone electron-beam resists, was investigated by changing the size of the aggregates in resist films and the latent-image contrast. The LER was estimated by directly observing the pattern sidewall. It was clarified that the LER for low-Mw resist is larger than that for high-Mw resist and also that the LER for low-Mw resist is independent of the latent image contrast. On the other hand, the LER for high-Mw resist increases rapidly with decreasing contrast. These results can be explained by the relationship between the size of aggregates and the width of the transition zone between low- and high-dose regions. This strongly suggests that low-Mw resists are not necessarily advantageous in reducing LER.
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Toru Yamaguchi, Toru Yamaguchi, Kenji Yamazaki, Kenji Yamazaki, Hideo Namatsu, Hideo Namatsu, } "Molecular weight effect on line-edge roughness", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485049; https://doi.org/10.1117/12.485049
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