Negative tone 193-nm photoresists

Nick Pugliano; Patrick J. Bolton; Tony Barbieri; Matt King; Michael T. Reilly; William Lawrence; Doris Kang; George G. Barclay

doi:10.1117/12.485075

12 June 2003 Negative tone 193-nm photoresists

Nick Pugliano, Patrick J. Bolton, Tony Barbieri, Matt King, Michael T. Reilly, William Lawrence, Doris Kang, George G. Barclay

Author Affiliations +

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485075
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Recently several authors have specifically noted the advantages of using negative tone resists for patterning narrow trenches. The growing interest stems from several factors. Firstly aerial image models indicate that negative tone systems should have improved process windows for patterning narrow trenches, relative to their positive tone counterparts. Secondly, negative tone resists are thought to be advantageous for minimizing variations of CD through pitch for trench layers thus reducing the optical proximity effect for certain exposure conditions. Finally, negative tone systems arguably circumvent the issue of resist poisoning from low k dielectric materials. The combination of these arguments has warranted our effort in the development of negative tone 193 nm resist systems, and this submission will present recent advances in this area. In particular the presentation will focus on prototypical negative tone formulations for use in patterning trenches with bright field imaging. We will present our results on a variety of performance attributes such as dissolution behavior, LER control, etch performance, resolution and process windows for these systems and we will provide a materials basis for using negative tone systems for patterning trenches for back end layers.

Citation Download Citation

Nick Pugliano, Patrick J. Bolton, Tony Barbieri, Matt King, Michael T. Reilly, William Lawrence, Doris Kang, and George G. Barclay "Negative tone 193-nm photoresists", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485075

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