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12 June 2003 New materials for 193-nm BARC application
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New materials prepared at Brewer Science, Inc., have been targeted for first (30 to 35 nm) and second (80 to 90 nm) reflectivity minima thickness, have less than 0.1% reflectivity, and were fast etching compared to commercially available photoresists. The optical constants of these materials were measured with a variable angle spectroscopic ellipsometer (VASE) and ranged from 1.6 to 1.8 for the real refractive index and from 0.31 to 0.65 for the imaginary refractive index. Etching of these materials gave a selectivity of 1.6:1 with CF4 gas, and a selectivity of 1.3:1 with HBr/O2 compared to photoresist. After thermosetting, these materials were immiscible with photoresists and were not affected by base developer. Profiles utilizing the second reflectivity minimum BARC with JSR’s AR414J photoresist have shown 90-nm (1:1 line space) dense lines and 70-nm (1:2 line space) semi-dense lines. Profiles with first reflectivity minimum BARCs showed 110-nm dense lines with JSR’s AR414J resist and 90-nm lines with FFA’s GAR8105G resist.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles J. Neef, Michelle R. Fowler, Michelle Windsor, and Cheryl Nesbit "New materials for 193-nm BARC application", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003);


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