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12 June 2003 New trilayer resist process using a phenol-capped siloxane-based middle-layer for ArF resist process
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Abstract
We have developed a new tri-layer resist process to meet requirements related to etching durability and aspect ratio of ArF process. The new phenol capped siloxane-based middle-layer does not change thickness and does not increase particles even after six months. Additionally no footing pattern formation occurs. Our middle-layer has a function as anti-reflect and simulated reflectivity in a top ArF resist layer is less than 1.0% at the tri-layer structure by controlling middle-layer and under-layer thickness. The critical dimension (CD) uniformity of 140 nm contact hole pattern is less than 6 nm (3 sigma) intra wafer. This new middle layer gives high etching sensitivity relative to under-layer and we can demonstrate pattern transfer using a contact hole pattern. We have applied this system to a dual damascene process and successfully completed a 280-nm pitch multilevel copper interconnection. We conclude that our new tri-layer resist process is suitable for use in mass production of 90-nm node LSI and below.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akihiko Otoguro, Satoshi Takechi, Takatoshi Deguchi, and Isamu Hanyu "New trilayer resist process using a phenol-capped siloxane-based middle-layer for ArF resist process", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485062
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