12 June 2003 Nonshrinkable photoresists for ArF lithography
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Abstract
Outgassing from the resist causes volume shrinkage of the resist film and extensive damage to optical lenses of exposure tools. Image distortion and throughput loss can take place due to the outgassing. In this study, we designed and synthesized a new acid labile group, 7,7-dimethyloxepan-2-one, which was introduced into the matrix polymers for ArF chemically amplified resists. The 7,7-dimethyloxepan-2-one group was readily cleaved and the carboxylic acid functionality was formed by acid-catalyzed ring-opening reaction in the exposed region after post-exposure bake. The resist patterns of 0.22 μm feature size were obtained with a conventional developer using an ArF exposure tool.
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Jin-Baek Kim, Jin-Baek Kim, Tae Hwan Oh, Tae Hwan Oh, Jae-Hak Choi, Jae-Hak Choi, Jae-Jun Lee, Jae-Jun Lee, } "Nonshrinkable photoresists for ArF lithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485074; https://doi.org/10.1117/12.485074
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