Recently semiconductor manufacturers have strived to continuously introduce new products with smaller circuit designs. With this in mind, we are required to improve critical dimension (CD) control during development. Resist reacts with TMAH to swell and dissolve in developer solution. During this time, dissolution products are created in and around the exposed area. The behavior of dissolution products is a factor that varies CD in the development process. The dissolution products diffuse into the developer solution. As one of the developer methods to eliminate the influence of dissolution products, the authors substituted the dissolved resist with a large amount of unreacted, remaining developer solution. This “Optimized Spin-off Develop Method” lessened the influence of dissolved resist compared to other normal development methods. Detailed evaluations, however, revealed that dissolution products were not able to be completely removed. Moreover, the swelled resist dissolved again during static development. As a result, it was observed that dissolution of the residuals affected the development process. To remove the dissolution products completely we established a novel development method. Using this method, we were able to eliminate dissolution products, resulting in minimization of CD variation.