You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
12 June 2003Novel development technique using ozonated water
Two kinds of development processes were investigated. One is two-step development in which surface treatment using ozonated water was employed between the two steps of the development. The other is development in which ozonated water and hydrogenated water were employed in the pre-treatment step and the post-treatment step. The above-mentioned processes were applied to KrF resist process of 130nm generation. By pre-treatment using ozonated water and two-step development using ozonated water in inter-treatment, the shot-to-shot CD variation of isolated line (line width = 180nm) and the intra-shot variation were improved from 6.6nm to 4.4nm and from 13.5nm to 8.6nm, respectively. And the total variation was greatly improved from 15.0nm to 8.6nm. Moreover, the number of defects was greatly decreased by post-treatment using ozonated water and hydrogenated water continuously.
The alert did not successfully save. Please try again later.
Kei Hayasaki, Riichiro Takahashi, Tomoyuki Takeishi, Shinichi Ito, "Novel development technique using ozonated water," Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485068