Novel development technique using ozonated water

Kei Hayasaki; Riichiro Takahashi; Tomoyuki Takeishi; Shinichi Ito

doi:10.1117/12.485068

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12 June 2003 Novel development technique using ozonated water

Kei Hayasaki; Riichiro Takahashi; Tomoyuki Takeishi; Shinichi Ito

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Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485068
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Two kinds of development processes were investigated. One is two-step development in which surface treatment using ozonated water was employed between the two steps of the development. The other is development in which ozonated water and hydrogenated water were employed in the pre-treatment step and the post-treatment step. The above-mentioned processes were applied to KrF resist process of 130nm generation. By pre-treatment using ozonated water and two-step development using ozonated water in inter-treatment, the shot-to-shot CD variation of isolated line (line width = 180nm) and the intra-shot variation were improved from 6.6nm to 4.4nm and from 13.5nm to 8.6nm, respectively. And the total variation was greatly improved from 15.0nm to 8.6nm. Moreover, the number of defects was greatly decreased by post-treatment using ozonated water and hydrogenated water continuously.

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Kei Hayasaki, Riichiro Takahashi, Tomoyuki Takeishi, and Shinichi Ito "Novel development technique using ozonated water", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485068

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