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12 June 2003 Novel main-chain-fluorinated polymers for 157-nm photoresists
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Main-chain-fluorinated base-resins, including tetrafluoroethylene and norbornene derivatives, were synthesized and their fundamental properties, such as transparency at 157 nm and solubility in a standard alkaline developer, were characterized. A high transparency, i.e., absorbance of less then 0.5 μm-1, was achieved by optimizing the polymerization conditions with a variety of counter monomers. It was found that the polymerization conditions could also control the dissolution rates of the fluoropolymers and increased the dissolution rate of unprotected fluoropolymers by about three orders of magnitude, which was sufficient for the alkaline developability. Positive-working resists based on fluororesins were developed and showed good transparency of less than 1 μm-1 at 157 nm, and good solubility in a standard alkaline solution of 0.26-N tetramethylammonium (without any swelling behavior). And an acceptable etching rate as resistant as ArF resists was obtained and 65-nm dense lines could be delineated by the exposure at 157-nm wavelength.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Toriumi, Meiten Koh, Takuji Ishikawa, T. Kodani, Takayuki Araki, Hirokazu Aoyama, Tsuneo Yamashita, Tamio Yamazaki, Takamitsu Furukawa, and Toshiro Itani "Novel main-chain-fluorinated polymers for 157-nm photoresists", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003);


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