12 June 2003 Novel materials for 157-nm bilayer resist designs
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Abstract
Absorbance data on a variety of silicon-containing monomers are reported at 157nm. Choice of appropriate silicon monomers led to a second-generation bilayer resist, which showed improved transparency over the first-generation silicon-derived hydroxystyrene based resist. Increasing the overall silicon content improved its transparency and O2 etch properties. The second-generation bilayer resist demonstrated 80nm resolution for dense line/space pairs. No silicon outgassing or post-exposure film loss was observed upon 157nm exposure.
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Stephanie J. Dilocker, Sanjay Malik, Binod B. De, "Novel materials for 157-nm bilayer resist designs", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485207; https://doi.org/10.1117/12.485207
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