12 June 2003 Performances of resists for 157-nm lithography based on monocyclic fluoropolymers
Author Affiliations +
Abstract
Fluoropolymers are key materials for the single-layer resists used in 157-nm lithography. We have been studying fluoropolymers to determine their potential for use as the base resin and have developed a monocyclic fluorinated polymer with a blocking group of Cyclohexylcyclohexyloxymethyl (CCOM) that has high transmittance (an absorption coefficient of 0.64 μm-1) at a 157-nm exposure wavelength and high dry-etching resistance (a dry-etching rate of 1.75 times that of KrF resist) under organic bottom anti-reflective coating/hard mark dry-etching conditions. A resist based on our monocyclic fluoropolymer had high sensitivity. Using it, we were able to resolve a 60-nm line-and-space pattern using a 157-nm laser microstepper (numerical aperture = 0.85) with a resolution enhanced technology of an alternating phase-shifting mask. This polymer was demonstrated to simultaneously enable high transparency, high dry-etching resistance, and good imaging performance.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seiichi Ishikawa, Seiichi Ishikawa, Shigeo Irie, Shigeo Irie, Toshiro Itani, Toshiro Itani, Yasuhide Kawaguchi, Yasuhide Kawaguchi, Osamu Yokokoji, Osamu Yokokoji, Shun-ichi Kodama, Shun-ichi Kodama, } "Performances of resists for 157-nm lithography based on monocyclic fluoropolymers", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485051; https://doi.org/10.1117/12.485051
PROCEEDINGS
9 PAGES


SHARE
Back to Top