12 June 2003 Relation between optical property of pattern image and adhesion of resist pattern
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Abstract
To get fine patterns of ArF photoresist without pattern collapse, we studied the relation between optical property of pattern image and adhesion of photoresist pattern. In concern of the type of photo mask, we found that using attenuated phase shift mask could make experimental small resolution limit beyond the estimation by simulation. About ARC substrate structure (inorganic ARL/ oxide/ polySi), it was important not only to optimize the reflectivity, but also to optimize the phase of reflectance. Photoresist was easy to collapse when the phase of reflectance at the interface between photoresist and inorganic ARL is near the 0 degree, although the reflectivity was set below 1%. In order to change the phase of reflectance, the film thickness of oxide was varied. In the observation of photoresist profile, bottom profile was changed similar to simulation. In the case of organic bottom ARC, we could not observe the effect of the phase.
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Junjiro Sakai, Junjiro Sakai, Akihiro Nakae, Akihiro Nakae, Atsumi Yamaguchi, Atsumi Yamaguchi, Kouichirou Tsujita, Kouichirou Tsujita, } "Relation between optical property of pattern image and adhesion of resist pattern", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.483760; https://doi.org/10.1117/12.483760
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