12 June 2003 Rinse liquid to improve pattern collapse behavior
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We designed and prepared a test mask to study a pattern collapse (PC) and investigated a rinse dependency. We report the effect of surfactant and solvent in rinse. The collapse behavior was quantified in terms of the first collapsed critical dimension (FCCD) in 90nm L/S ArF resist patterns. In-house rinse liquids (SE series) showed relatively lower surface tension (ST) compared to commercial one. They greatly reduced pattern collapse behavior (PCB) of from FCCD 102nm to 85nm L/S using these solutions. However, SE-100 showed defect by bubble and the others show bad compatibility with photoresist. SES-100 is the only rinse liquid candidate in this experiment.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Geunsu Lee, Geunsu Lee, Sung-Koo Lee, Sung-Koo Lee, Young-Sun Hwang, Young-Sun Hwang, Jae-Chang Jung, Jae-Chang Jung, Cheol-Kyu Bok, Cheol-Kyu Bok, Seung-Chan Moon, Seung-Chan Moon, Ki-Soo Shin, Ki-Soo Shin, } "Rinse liquid to improve pattern collapse behavior", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485175; https://doi.org/10.1117/12.485175

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