12 June 2003 Study of resist outgassing by F2 laser irradiation
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Abstract
F2 laser lithography at 157nm is the most promising candidate of post-ArF excimer laser lithography. A major concern, however, is the deterioration of 157nm optics due to contamination under F2 laser irradiation. An evaluation of outgassed products of 157nm resist and their effect on optical materials and is therefore indispensable for F2 laser lithography. Semiconductor Leading Edge Technologies Inc. (Selete) and Komatsu Ltd. designed and constructed a resist outgassing evaluation system in order to develop exposure tools and resists for 157nm lithography. The system determines the negative effects of outgassing resist contaminants on the transmittance of optical materials under F2 laser irradiation. The system has two units. One unit collects resist outgas and analyzes sampled gas in a gas chromatograph mass spectrometer (GC-MS). The other unit is a resist outgassing adhesion unit, which measures the transmittance change of optical materials due to contamination adhesion in real-time. Our analysis showed that most outgassed products were from the resist protecting groups and photo acid generators (PAG) including small hydrocarbons like isobutene, benzene derivatives and dimethoxymethane. After irradiating a 157nm lithography resist with a total dose of 30J/cm2 the transmittance of a calcium fluoride (CaF2) substrate decreased from initially 90% to 85%. This was due to adhesion contamination as x-ray photoelectron spectroscopy (XPS) analysis showed an organic contamination deposition of over 5nm thickness on the CaF2 substrate.
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Yasuo Itakura, Youichi Kawasa, Akira Sumitani, Seiichi Ishikawa, Shigeo Irie, Toshiro Itani, "Study of resist outgassing by F2 laser irradiation", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485087; https://doi.org/10.1117/12.485087
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