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12 June 2003 TMAH soak process optimization with DNQ positive resist for lift-off applications
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Abstract
Reduced developer soak rinse time and increased post exposure bake temperatures were found to be the most effective process variables in extending the resist overhang. An extended resist overhang of 0.7 μm can be obtained under extreme conditions. Less extreme conditions were found to be more optimum for improved resolution with adequate lift-off profiles. The optimized process for AZ MIR 703 resist offers a range of options in resolution linearity, trench size bias, overhang and delta trench top-bottom width. Trench resolution of 0.2 μm is demonstrated in i-line regime.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Salem K. Mullen, Medhat A. Toukhy, Ping-Hung Lu, Sunit S. Dixit, and Paul Sellers "TMAH soak process optimization with DNQ positive resist for lift-off applications", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485198
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