12 June 2003 Thin film type 248-nm bottom antireflective coatings
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Abstract
A frequent problem encountered by photoresists during the manufacturing of semiconductor device is that activating radiation is reflected back into the photoresist by the substrate. So, it is necessary that the light reflection is reduced from the substrate. One approach to reduce the light reflection is the use of bottom anti-reflective coating (BARC) applied to the substrate beneath the photoresist layer. The BARC technology has been utilized for a few years to minimize the reflectivity. As the chip size is reduced to sub 0.13-micron, the photoresist thickness has to decrease with the aspect ratio being less than 3.0. Therefore, new Organic BARC is strongly required which has the minimum reflectivity with thinner BARC thickness and higher etch selectivity towards resist. SAMSUNG Electronics has developed the advanced Organic BARC with Nissan Chemical Industries, Ltd. and Brewer Science, Inc. for achieving the above purpose. As a result, the suitable high performance SNAC2002 series KrF Organic BARCs were developed. Using CF4 gas as etchant, the plasma etch rate of SNAC2002 series is about 1.4 times higher than that of conventional KrF resists and 1.25 times higher than the existing product. The SNAC2002 series can minimize the substrate reflectivity at below 40nm BARC thickness, shows excellent litho performance and coating properties.
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Tomoyuki Enomoto, Tomoyuki Enomoto, Keisuke Nakayama, Keisuke Nakayama, Kenichi Mizusawa, Kenichi Mizusawa, Yasuyuki Nakajima, Yasuyuki Nakajima, Sangwoong Yoon, Sangwoong Yoon, Yong-Hoon Kim, Yong-Hoon Kim, Young-Ho Kim, Young-Ho Kim, Hoesik Chung, Hoesik Chung, Sang Mun Chon, Sang Mun Chon, } "Thin film type 248-nm bottom antireflective coatings", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); doi: 10.1117/12.485060; https://doi.org/10.1117/12.485060
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