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12 June 2003 What an antishrinkage coating method can surmount among stumbling block of ArF resists
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Abstract
ArF resist systems have some serious stumbling block related to etch selectivity, pattern collapse, and pattern slimming during CD-SEM measurement. Among these problems, when exposed to electron beam, the linewidth reduction of resist features is the main topic in our study. Since the pattern slimming may result in accuracy error of measurement and potential device reliability issues due to permanent deformation, any method to improve this undesired phenomenon should be found. In this paper, the anti-shrinkage coating approach as a method to improve pattern slimming during SEM measurement will be described. The Anti-Shrinkage Coating (ASC) material consists of anti-shrinking water-soluble polymers and other additives (e.g. cross-linker). The ASC method is a chemical attaching process that includes simple coating, mixing, baking, and rinse steps with DI water, applied after conventional photolithography. The ASC method results that the pattern shrinkage during SEM measurement is reduced less than a half of the resist alone. Additionally, the employment of the ASC method gives rise to improve pattern fidelity and LER, which are serious problems in ArF lithography. Finally, we expect that the ASC method can contribute to form the critical small space patterns.
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Hyung-Do Kim, Si-Hyeung Lee, Sang-Jun Choi, Jung-Hyeon Lee, Han-Ku Cho, Woo-Sung Han, and Joo-Tae Moon "What an antishrinkage coating method can surmount among stumbling block of ArF resists", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485120
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