26 June 2003 157-nm Micrascan VII initial lithography results
Author Affiliations +
Proceedings Volume 5040, Optical Microlithography XVI; (2003); doi: 10.1117/12.485423
Event: Microlithography 2003, 2003, Santa Clara, California, United States
Abstract
This paper describes the system performance for Micrascan VII and reports on some of the photo-resist testing results. The challenges of tool design range from the optical form to new resists. The Micrascan VII architecture has the traditional look of the prior Micrascan family of tools. The evolution of design for operation at 157 nm wavelength has been implemented and is presented. The use of calcium fluoride exclusively in the projection optics design presented many challenges. Performance of the projection optics is shown as well as lithographic results. Initial lithographic results indicate that pattern features well below 100 nm can be printed even with first generation 157 nm resists. 60 nm resist lines with 0.3 μm depth of focus are reported.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harry Sewell, Bruce A. Tirri, Timothy O'Neil, Thomas J. Fahey, Diane C. McCafferty, Paul B. Reid, James A. McClay, "157-nm Micrascan VII initial lithography results", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485423; https://doi.org/10.1117/12.485423
PROCEEDINGS
11 PAGES


SHARE
KEYWORDS
Reticles

Pellicles

Semiconducting wafers

Lithography

Absorption

Oxygen

Silicon

Back to Top