26 June 2003 ACLV-analysis in production and its impact on product performance
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Proceedings Volume 5040, Optical Microlithography XVI; (2003); doi: 10.1117/12.485337
Event: Microlithography 2003, 2003, Santa Clara, California, United States
Abstract
The paramount importance of CD-control for logic speed is well recognized. Whereas across wafer-line-width-variation (AWLV) influences the width of the speed distribution, across chip line-width-variation (ACLV) is a dominating factor for device leakage. In our study we will discuss different ACLV-terms based on AMD’s 0.18 and 0.13μm processes. We will show how the variation of different scanner and reticle-parameters affects both random and systematic ACLV-components. We will show that the systematic part either can be dominated by global or layout-specific CD-signature, depending on the reticle manufacturing process, scanner condition and the circuit design. In particular we will discuss the impact of defocus, lens aberrations, illumination uniformity dose accuracy and flare. Eventually, we will show the response of critical performance parameters of state of the art μPs and we will judge different parameters with respect to their impact on μP-speed. Focus control and flare control are found to be the most critical tasks. We will discuss appropriate methods to ensure both focus and flare don’t affect device performance negatively.
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Rolf Seltmann, Rolf Stephan, Martin Mazur, Christopher Spence, Bruno La Fontaine, Dirk Stankowski, Andre Poock, Wolfram Grundke, "ACLV-analysis in production and its impact on product performance", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485337; https://doi.org/10.1117/12.485337
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KEYWORDS
Scanners

Reticles

Manufacturing

Semiconducting wafers

Critical dimension metrology

Optical filters

Contamination

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