26 June 2003 Catadioptric lens development for DUV and VUV projection optics
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According to the International Technology Roadmap for Semiconductors (ITRS), the 65nm technology node is forecast to appear in 2007. In this paper, we propose two specifications for the projection optics at 65nm nodes. The one is over 1.0 numerical aperture (NA) at 193nm lithography by liquid immersion. The other is 0.85 NA at 157nm lithography. Since it almost impossible for traditional dioptric optics to realize these specifications, catadioptric is supposedly the leading optics for an extreme optical lithography, like 65nm node. Described in the paper are feasibility study for catadioptric optics, and our assembly strategy. Emphasis is placed on our selection methodology among a variety of catadioptric configurations.
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Yasuhiro Ohmura, Yasuhiro Ohmura, Masahiro Nakagawa, Masahiro Nakagawa, Tomoyuki Matsuyama, Tomoyuki Matsuyama, Yuichi Shibazaki, Yuichi Shibazaki, } "Catadioptric lens development for DUV and VUV projection optics", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485462; https://doi.org/10.1117/12.485462


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