26 June 2003 Dual-chamber ultra line-narrowed excimer light source for 193-nm lithography
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Abstract
Since the announcement in March 2002 of plans to develop an advanced light source to meet the future spectral power and cost requirements of photolithography, we have made significant progress in the development and productization of the core technology for an ultra line-narrowed, excimer light source based on a master oscillator-power amplifier (MOPA) approach. In this paper, we will focus on the architecture and performance of the first generation of production-ready, MOPA-based ArF light sources developed at Cymer, Inc. This first generation of MOPA-based ArF light sources is referred to as the XLA 100 product series.
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Vladimir B. Fleurov, Daniel J. Colon, Daniel J. W. Brown, Patrick O'Keeffe, Herve Besaucele, Alexander I. Ershov, Fedor Trintchouk, T. Ishihara, Paolo Zambon, R. J. Rafac, A. Lukashev, "Dual-chamber ultra line-narrowed excimer light source for 193-nm lithography", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); doi: 10.1117/12.485358; https://doi.org/10.1117/12.485358
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