Feasibility evaluations of alternating phase-shift mask for imaging sub-80-nm feature with KrF

Myung-Ah Kang; Sung-Hyuck Kim; In-Kyun Shin; Seong-Woon Choi; Jung-Min Sohn

doi:10.1117/12.485430

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26 June 2003 Feasibility evaluations of alternating phase-shift mask for imaging sub-80nm feature with KrF

Myung-Ah Kang, Sung-Hyuck Kim, In-Kyun Shin, Seong-Woon Choi, Jung-Min Sohn

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Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485430
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Alternating phase shift mask (AltPSM) is considered as one of the most promising technique in leading-edge lithography. Its optical performance can be verified by sub-100nm gate generation and guaranteed device properties, indicated as depth of focus (DOF) and on chip CD variation (OCV). Nevertheless, continuous gate reduction in logic device demands more high-qualified mask process and optimization of illumination to overcome resolution limit. As one of the solution, appropriate mask structure and OPC rule dependent on illumination condition are evaluated. Issues out of mask manufacturing and Cr-less PEPSM as substitution of PEPSM are also discussed. Besides, interrelation between issues of mask and optical characteristics are investigated and compared mutually. In the end of this paper, we propose the optimum mask type and opportune time for ArF lithography.

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Myung-Ah Kang, Sung-Hyuck Kim, In-Kyun Shin, Seong-Woon Choi, and Jung-Min Sohn "Feasibility evaluations of alternating phase-shift mask for imaging sub-80nm feature with KrF", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485430

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