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26 June 2003 Full-level alternating PSM for sub-100nm DRAM gate patterning
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Abstract
The lithographic potential of alternating PSM for sub-100nm gate patterning have been evaluated in comparison to alternative techniques. The status of the key elements of the full level alternating PSM approach including design conversion, optical proximity correction, mask making, double exposure and phase-shifting mask imaging will be demonstrated for a 256MDRAM device. Experimental data describing the phase-shifting mask quality, the lithographic process windows and the CD control obtained for alternating PSM in full level and array only approach will be presented.
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Rainer Pforr, Marco Ahrens, Wolfgang Dettmann, Mario Hennig, Roderick Koehle, Burkhard Ludwig, Nicolo Morgana, and Joerg Thiele "Full-level alternating PSM for sub-100nm DRAM gate patterning", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485521
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