Gate imaging for 0.09-&#956;m logic technology: comparison of single exposure with assist bars and the CODE approach

Yorick Trouiller; Jerome Belledent; J. D. Chapon; V. Rousset; Yves Fabien Rody; Serdar Manakli; Pierre-Jerome Goirand

doi:10.1117/12.485527

26 June 2003 Gate imaging for 0.09-μm logic technology: comparison of single exposure with assist bars and the CODE approach x

Yorick Trouiller, Jerome Belledent, J. D. Chapon, V. Rousset, Yves Fabien Rody, Serdar Manakli, Pierre-Jerome Goirand

Author Affiliations +

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485527
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

xIn order to address some specific issues related to gate level printing of the 0.09μm logic process, the following mask and illumination solutions have been evaluated. Annular and Quasar illumination using binary mask with assist feature and the CODE (Complementary Double Exposure) technique. Two different linewidths have been targeted after lithography: 100nm and 80nm respectively for lowpower and high-speed applications. The different solutions have been compared for their printing performance through pitch for Energy Latitude, Depth of Focus and Mask Error Enhancement Factor. The assist bar printability and line-end control was also determined. For printing the 100nm target, all tested options can be used, with a preference for Quasar illumination for the gain in Depth of Focus and MEEF. For the 80nm target however, only the CODE technique with Quasar give sufficient good results for the critical litho parameters.

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Yorick Trouiller, Jerome Belledent, J. D. Chapon, V. Rousset, Yves Fabien Rody, Serdar Manakli, and Pierre-Jerome Goirand "Gate imaging for 0.09-μm logic technology: comparison of single exposure with assist bars and the CODE approach x", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485527

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